IRFD113中文资料GESS数据手册PDF规格书
IRFD113规格书详情
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
产品属性
- 型号：
IRFD113
- 功能描述：
MOSFET N-Chan 100V 1.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
DIP4 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
Vishay / Siliconix |
2025+ |
HVMDIP-4 |
56303 |
询价 | |||
IR |
23+ |
DIP-4 |
8238 |
询价 | |||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
雷达 |
2020+ |
DIP-4 |
8400 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
2023+ |
DIP-4 |
5800 |
进口原装,现货热卖 |
询价 | ||
IR |
24+ |
DIP-4 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
MOT |
9207 |
382 |
公司优势库存 热卖中! |
询价 | |||
VishayVishay |
NEW- |
MOSFETs |
100000 |
Trans MOSFET N-CH 60V 0.8A 4-Pin HVMDIP |
询价 | ||
VISHAY(威世) |
24+ |
HVMDIP4 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 |
