IRFD113中文资料GESS数据手册PDF规格书
IRFD113规格书详情
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
产品属性
- 型号：
IRFD113
- 功能描述：
MOSFET N-Chan 100V 1.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
23+ |
65480 |
询价 | ||||
IR |
24+ |
DIP-4 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
IR |
26+ |
PLCC44 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
询价 | ||
Vishay Siliconix |
22+ |
4DIP |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
25+ |
DIP4 |
850 |
全新原装正品支持含税 |
询价 | ||
IR |
26+ |
DIP-4 |
8238 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
VIS |
24+ |
DIP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
IR |
18+ |
DIP |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
IR |
2025+ |
DIP-4 |
5000 |
原装进口价格优 请找坤融电子! |
询价 | ||
IR |
22+ |
DIP-4 |
8000 |
原装正品支持实单 |
询价 |
