IRFD112中文资料GESS数据手册PDF规格书
IRFD112规格书详情
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
产品属性
- 型号：
IRFD112
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2023+ |
DIP-4 |
5800 |
进口原装,现货热卖 |
询价 | ||
MOT |
9207 |
382 |
公司优势库存 热卖中! |
询价 | |||
IR |
06+ |
原厂原装 |
4483 |
只做全新原装真实现货供应 |
询价 | ||
MOT |
23+ |
65480 |
询价 | ||||
VIS |
24+ |
DIP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR-VISHAY |
23+ |
DIP4 |
19286 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IR |
DIP-4 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
24+ |
N/A |
72000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
IR |
23+ |
DIP-4 |
1350 |
全新原装现货 |
询价 | ||
IR |
23+ |
16+ |
8000 |
只做原装现货 |
询价 |
