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IRFD112中文资料GESS数据手册PDF规格书

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厂商型号

IRFD112

功能描述

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR

文件大小

112.88 Kbytes

页面数量

2

生产厂商

GESS

数据手册

下载地址一下载地址二

更新时间

2025-10-10 22:50:00

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IRFD112规格书详情

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR

This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

产品属性

  • 型号:

    IRFD112

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供应商 型号 品牌 批号 封装 库存 备注 价格
ON
23+
NA
6500
全新原装假一赔十
询价
VIS
24+
DIP
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
HARRIS
24+/25+
70
原装正品现货库存价优
询价
IR
01+
DIP-4
12999
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
IR
25+
PLCC44
18000
原厂直接发货进口原装
询价
IR
22+
DIP-4
8000
原装正品支持实单
询价
IOR
24+
DIP-4
100
询价
MOT
9207
382
公司优势库存 热卖中!
询价
IR
DIP-4
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
IR
NEW
DIP-4
8238
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价