isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.1A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：4.03867 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

文件：1.64596 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：1.64435 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：585.44 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：1.64435 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Fast switching;

Vishay

威世科技

Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)

Infineon

英飞凌

MOS(场效应管)

Vishay

威世科技