Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)

Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Benefits Advanced Process Technology Ultra Low On-Resistance Increas

文件：115.57 Kbytes 页数：9 Pages

IRF

AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

Description This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175°C junction operating temperature, fast switching speed and improved ruggedness in single

文件：148.17 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

文件：205.2 Kbytes 页数：10 Pages

IRF

Advanced Process Technology

文件：205.2 Kbytes 页数：10 Pages

IRF

采用 Super 220（TO-273AA）封装的 40V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n ;

Infineon

英飞凌