Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

文件：138.98 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.025Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.7 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● UPS / Motor Control Invert

文件：224.3 Kbytes 页数：11 Pages

IRF

N-Channel 100-V (D-S) MOSFET

文件：981.72 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

High frequency DC-DC converters

文件：233.27 Kbytes 页数：12 Pages

IRF

High frequency DC-DC converters

文件：233.27 Kbytes 页数：12 Pages

IRF

采用 TO-220AB 封装的 100V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌