N-Channel MOSFET Transistor

• DESCRITION • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • Hard Switched and High Frequency Circuits • FEATURES • Static drain-source on-resistance: RDS(on) ≤3mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lo

文件：340.04 Kbytes 页数：2 Pages

ISC

无锡固电

TO-220AB 封装的 60V 单 N 通道 IR MOSFET ™

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

Infineon

英飞凌

HEXFET Power MOSFET

Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Power Switching ● Hard Switched and High Frequency Circuits Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● En

文件：430.8 Kbytes 页数：11 Pages

IRF

HEXFETPower MOSFET

文件：301.01 Kbytes 页数：8 Pages

IRF

60V 单 N 通道 HEXFET 功率 MOSFET，采用无铅无卤素 TO-220AB 封装

\n优势:\n• 符合 RoHS;

Infineon

英飞凌