Power MOSFET

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VishayVishay Siliconix

威世科技

11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as s • 11A, 200V\n• rDS(ON) = 0.500Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Related Literature\n- TB334, “Guidelines for Soldering Surface Mount\nComponents to PC Boards”;

Renesas

瑞萨

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• P-channel;

Vishay

威世科技

HEXFET Power MOSFET.

VDSS = -200V\nRDS(on) = 0.50 Ohm\nID = -11A

Infineon

英飞凌

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts

文件：158.01 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inform

文件：230.33 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：1.92898 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Hexfet Power Mosfet

文件：3.45318 Mbytes 页数：7 Pages

IRF

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)

文件：170.71 Kbytes 页数：6 Pages

IRF

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • P-channel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inform

文件：230.33 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技