丝印：IRF9310；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Features Industry-standard pinout SOP-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification

文件：392.49 Kbytes 页数：8 Pages

UMW

友台半导体

P-Channel 30 V (D-S) MOSFET

Features Industry-standard pinout SOP-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification

文件：414.56 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

CHARGE AND DISCHARGE SWITCH FOR NOTEBOOK PC BATTERY APPLICATION

文件：283.58 Kbytes 页数：8 Pages

IRF

丝印：IRF9310；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Features Industry-standard pinout SOP-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification

文件：414.56 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：IRF9310；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Features Industry-standard pinout SOP-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification

文件：392.49 Kbytes 页数：8 Pages

UMW

友台半导体

-30V 单个 P 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)\n• Reduced design complexity in high-side configuration (vs N-channel device)\n• Easier ;

Infineon

英飞凌

P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -20A RDS(ON)

文件：1.68719 Mbytes 页数：4 Pages

Bychip

百域芯

丝印：F9310；Package：SOP-8；P-Channel Enhancement Mode MOSFET

Features RDS(ON)=5.2mQ@VGs=-10V RDS(ON) =9.5mQ@VGs=-4V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

文件：1.0988 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

CHARGE AND DISCHARGE SWITCH FOR NOTEBOOK PC BATTERY APPLICATION

文件：283.58 Kbytes 页数：8 Pages

IRF

Charge and Discharge Switch for Notebook PC Battery Appilcation

文件：283.58 Kbytes 页数：8 Pages

IRF