丝印：F9310；Package：SOP-8；P-Channel Enhancement Mode MOSFET

Features RDS(ON)=5.2mQ@VGs=-10V RDS(ON) =9.5mQ@VGs=-4V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

文件：1.0988 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

RoHS Compliant Containing no Lead, no Bromide and no Halogen

文件：296.42 Kbytes 页数：9 Pages

Infineon

英飞凌

P-Channel Enhancement Mode MOSFET

Description The IRFH9310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-90A RDS(ON)

文件：771.83 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

RoHS Compliant Containing no Lead, no Bromide and no Halogen

文件：296.42 Kbytes 页数：9 Pages

IRF