丝印：IRFH9310；Package：DFN5X6-8L；P-Channel Enhancement Mode MOSFET

Description The IRFH9310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID =-90A RDS(ON)

文件：771.83 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

RoHS Compliant Containing no Lead, no Bromide and no Halogen

文件：296.42 Kbytes 页数：9 Pages

Infineon

英飞凌

-30V 单 P 通道 StrongIRFET ™功率 MOSFET，采用 PQFN 5x6 封装

\n优势:\n• RoHS Compliant\n• P-Channel MOSFET;

Infineon

英飞凌

RoHS Compliant Containing no Lead, no Bromide and no Halogen

文件：296.42 Kbytes 页数：9 Pages

IRF

Charge and Discharge Switch for Notebook PC Battery Application

文件：296.42 Kbytes 页数：9 Pages

IRF

RoHS Compliant Containing no Lead, no Bromide and no Halogen

文件：296.42 Kbytes 页数：9 Pages

IRF

Charge and Discharge Switch for Notebook PC Battery Application

文件：296.42 Kbytes 页数：9 Pages

IRF