Power MOSFET(Vdss=100V, iD=6.9A)

Benefits ● Ultra Low On-Resistance ● High Speed Switching ● Low Gate Drive Current Due to Improved Gate Charge Characteristic ● Improved Avalanche Ruggedness and Dynamic dv/dt ● Fully Characterized Avalanche Voltage and Current Applications ● Telecom and Data-Com 24 and 48V input DC-DC conv

文件：196.09 Kbytes 页数：8 Pages

IRF

100V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 符合行业标准的引脚;

Infineon

英飞凌

HEXFET Power MOSFET

Benefits ● Ultra Low On-Resistance ● High Speed Switching ● Low Gate Drive Current Due to Improved Gate Charge Characteristic ● Improved Avalanche Ruggedness and Dynamic dv/dt ● Fully Characterized Avalanche Voltage and Current Applications ● Telecom and Data-Com 24 and 48V input DC-DC conv

文件：127.03 Kbytes 页数：8 Pages

IRF

Telecom and Data-Com 24 and 48V input DC-DC converters

文件：132.43 Kbytes 页数：8 Pages

IRF

Telecom and Data-Com 24 and 48V input DC-DC converters

文件：132.43 Kbytes 页数：8 Pages

IRF

Industry-standard pinout SO-8 Package

文件：199.55 Kbytes 页数：8 Pages

IRF

Industry-standard pinout SO-8 Package

文件：199.55 Kbytes 页数：8 Pages

IRF

Telecom and Data-Com 24 and 48V input DC-DC converters

文件：177.88 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

文件：297.27 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 100 V (D-S) MOSFET

文件：1.91613 Mbytes 页数：9 Pages

VBSEMI

微碧半导体