丝印：IRF7406；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board s

文件：417.3 Kbytes 页数：8 Pages

UMW

友台半导体

P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board spa

文件：380.51 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：216.73 Kbytes 页数：9 Pages

IRF

丝印：IRF7406；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board s

文件：417.3 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7406；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Description The SOP-8 has been modified through a customized leadframe for enhanced therma characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements multiple devices can be used in an application with dramatically reduced board spa

文件：380.51 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

采用 SO-8 封装的 -30V 单 P 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

Infineon

英飞凌

HEXFET짰Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：235.41 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

文件：268.39 Kbytes 页数：9 Pages

IRF

Generation V Technology

文件：215.79 Kbytes 页数：8 Pages

IRF

ULTAR LOW ON RESISTANCE

文件：240.98 Kbytes 页数：9 Pages

IRF