IRF646中文资料14A, 275V, 0.280 Ohm, N-Channel Power MOSFET数据手册Renesas规格书

描述 Description

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the reakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

特性 Features

• 14A, 275V
• rDS(ON)= 0.280Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275VDC Rating-120VAC Line System Operation
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”