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IRF640S中文资料威世数据手册PDF规格书

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厂商型号

IRF640S

功能描述

Power MOSFET

文件大小

237.05 Kbytes

页面数量

10

生产厂商

Vishay Vishay Siliconix

中文名称

威世 威世科技公司

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-12 17:30:00

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IRF640S规格书详情

FEATURES

• Surface mount

• Low-profile through-hole

• Available in tape and reel

• Dynamic dV/dt rating

• 150 °C operating temperature

• Fast switching

• Fully avalanche rated

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non-RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details.

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combinations of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D2PAK is a surface mount power package capable of

accommodating die size up to HEX-4. It provides the

highest power capability and the last lowest possible

on-resistance in any existing surface mount package. The

D2PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application. The

through-hole version (SiHF640L) is available for low-profile

applications.

产品属性

  • 型号:

    IRF640S

  • 功能描述:

    MOSFET N-Chan 200V 18 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

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