IRF640S中文资料威世数据手册PDF规格书
IRF640S规格书详情
FEATURES
• Surface mount
• Low-profile through-hole
• Available in tape and reel
• Dynamic dV/dt rating
• 150 °C operating temperature
• Fast switching
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the last lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (SiHF640L) is available for low-profile
applications.
产品属性
- 型号:
IRF640S
- 功能描述:
MOSFET N-Chan 200V 18 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
06+ |
TO-263 |
15 |
询价 | |||
IR |
NEW |
TO-263 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
IR |
23+ |
SOT263 |
65480 |
询价 | |||
IR |
22+ |
TO263 |
30000 |
只做原装正品 |
询价 | ||
IR |
25+ |
10 |
公司原装现货常备库存! |
询价 | |||
IR |
25+ |
15 |
公司优势库存 热卖中!! |
询价 | |||
SILICONIXVISHAY |
21+ |
NA |
5000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
IR |
23+ |
TO-263 |
10000 |
专做原装正品,假一罚百! |
询价 | ||
VISHAY |
2018+ |
TO-263 |
26976 |
代理原装现货/特价热卖! |
询价 | ||
ST |
25+ |
TO-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
询价 |


