IRF640中文资料意法半导体数据手册PDF规格书
IRF640规格书详情
DESCRIPTION
This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
■ TYPICAL RDS(on) = 0.150 Ω
■ EXTREMELY HIGH dV/dt CAPABILITY
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
产品属性
- 型号：
IRF640
- 功能描述：
MOSFET N-Chan 200V 18 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI |
25+ |
N/A |
11543 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ONSEMI |
25+ |
N/A |
11543 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
TOSHIBA |
2016+ |
TO-220F |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
23+ |
TO220 |
12000 |
全新原装假一赔十 |
询价 | ||
IR |
24+ |
3600 |
TO-220 |
询价 | |||
IR/VISHAY |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
SEC |
2026+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
IR |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
SEC |
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
询价 | ||
IR |
24+ |
TO 220 |
160871 |
明嘉莱只做原装正品现货 |
询价 |
