IRF640中文资料意法半导体数据手册PDF规格书
IRF640规格书详情
DESCRIPTION
This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
■ TYPICAL RDS(on) = 0.150 Ω
■ EXTREMELY HIGH dV/dt CAPABILITY
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
产品属性
- 型号：
IRF640
- 功能描述：
MOSFET N-Chan 200V 18 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
原装IR |
TO220 |
15620 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
IR |
24+ |
PTO-220 |
1500 |
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航 |
询价 | ||
IR |
2450+ |
TO-220 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
IR |
24+ |
TO 220 |
160871 |
明嘉莱只做原装正品现货 |
询价 | ||
ST |
23+ |
TO-220 |
65480 |
询价 | |||
VISH |
三年内 |
1983 |
只做原装正品 |
询价 | |||
CJ/长电 |
22+ |
TO-220-3L |
15240 |
原装正品 |
询价 | ||
IR |
24+ |
3600 |
TO-220 |
询价 | |||
IR |
06+ |
TO-220 |
12000 |
全新原装 绝对有货 |
询价 | ||
IR |
23+24 |
TO-220 |
9860 |
原厂原包装。终端BOM表可配单。可开13%增值税 |
询价 |
