Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB

NJS

N-channel TrenchMOS transistor

VDSS = 100 V ID = 23 A RDS(ON) ≤ 77 mΩ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. t

文件：86.08 Kbytes 页数：9 Pages

PHI

飞利浦

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

文件：176.15 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package

文件：1.04376 Mbytes 页数：8 Pages

VBSEMI

微碧半导体