AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A )

VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp

文件：812.24 Kbytes 页数：13 Pages

IRF

Advanced Process Technology

文件：401.85 Kbytes 页数：12 Pages

IRF

Advanced Process Technology

文件：401.85 Kbytes 页数：12 Pages

IRF

Advanced Process Technology

文件：401.85 Kbytes 页数：12 Pages

IRF

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：299.72 Kbytes 页数：2 Pages

ISC

无锡固电

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

Infineon

英飞凌

采用 D2-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

Infineon

英飞凌

AUTOMOTIVE MOSFET

Infineon

英飞凌