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IRF1010NL

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NL

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010NLPBF

HEXFET짰PowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010NLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010NPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010NPBF

AdvancedProcessTechnologyUltraLowOn-Resistance

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF1010NS

PowerMOSFET(Vdss=55V,Rds(on)=11mohm,Id=85A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NS

FullyAvalancheRated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

详细参数

  • 型号:

    IRF1010ESPBF

  • 制造商:

    International Rectifier

  • 功能描述:

    MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK

  • 功能描述:

    Trans MOSFET N-CH 60V 84A 3-Pin(2+Tab) D2PAK

  • 功能描述:

    TRANS MOSFET N-CH 60V 84A 3PIN D2PAK - Rail/Tube

  • 功能描述:

    MOSFET N 60V 84A D2-PAK

  • 功能描述:

    MOSFET, N, 60V, 84A, D2-PAK

  • 功能描述:

    MOSFET, N, 60V, 84A, D2-PAK; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    84A; Drain Source Voltage

  • Vds:

    60V; On Resistance

  • Rds(on):

    12mohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    4V; Power Dissipation ;RoHS

  • Compliant:

    Yes

  • 功能描述:

    MOSFET N-Channel 60V 84A D2PAK

供应商型号品牌批号封装库存备注价格
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IR
25+23+
TO-263
27600
绝对原装正品全新进口深圳现货
询价
IR
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
IR
24+
65230
询价
IR
21+
TO-263
10000
原装现货假一罚十
询价
IR
2022+
TO-263
756
原厂代理 终端免费提供样品
询价
ir
24+
500000
行业低价,代理渠道
询价
IR
22+
TO-263
8000
原装正品支持实单
询价
IR
23+
TO-263
8560
受权代理!全新原装现货特价热卖!
询价
更多IRF1010ESPBF供应商 更新时间2025-7-18 9:03:00