IRF840

PowerMOSFET

IRF840

N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ●VGSRatedat±20V ●SiliconGateforFastSwitchingSpe

IRF840

Drives1x70WHIDlamp

Overview TheIRPLHID2Areferencedesignkitconsistsofacompleteballastsolutionfora70WHIDlamp.ThedesigncontainsanEMIfilter,lowvoltagepowersupply,activepowerfactorcorrectionandaballastcontrolcircuitusingtheIRS2573D.Thisdemoboardisintendedtohelpwiththeevalua

IRF840

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinoff-lineswitchedmodepower supplies,T.V.andcomputermonitorpowersupplies. DC-DCconverters,motorcontrolcircuitsandgeneralpurpose switchingapplications CompliancetoRoHS.

IRF840

N-ChannelMosfetTransistor

IRF840

SEMICONDUCTORS

IRF840

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

IRF840A

PowerMOSFET(Vdss=500V,Rds(on)max=0.85ohm,Id=8.0A)

HEXFET®PowerMOSFET VDSSRds(on)maxID 500V0.85Ω8.0A Applications lSwitchModePowerSupply(SMPS) lUninterruptablePowerSupply lHighspeedpowerswitching Benefits lLowGateChargeQgresultsinSimpleDriveRequirement lImprovedG

IRF840A

PowerMOSFET

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

IRF840A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)