Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=10A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Current Sense • Fast Switching • Ease

文件：221.97 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=10A)

Infineon

英飞凌

MOSFET N-CH 400V 10A TO-220-5

Vishay

威世科技

N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. 1. HIGH CURRENT SWITCHING 2. UNINTERRUPTIBLE POWER SUPPLY (U

文件：93.41 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：894.8 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Power MOSFETs, 10A, 350V/400V

文件：154.43 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司