Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Current Sense • Fast Switching • Ease

文件：223.63 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A)

Infineon

英飞凌

MOSFET N-CH 400V 5.5A TO-220-5

Vishay

威世

PowerMOS transistor Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRF730 is supplied in

文件：59.69 Kbytes 页数：7 Pages

PHI

PHI

N - CHANNEL 400V - 0.75 ohm - 5.5A - TO-220 PowerMESH] MOSFET

Description The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. General features

文件：94.17 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

5V STEP-DOWN, CURRENT-MODE PWM DC-DC CONVERTERS

DESCRIPTION The ST730A is a 5V output CMOS, step-down switching regulator. The ST730A accepts inputs between 5.2V and 11V and delivers 450mA. Typical efficiencies are 85 to 96. Quiescent supply current is 0.8mA and only 0.3µA in shutdown mode. The output does not exhibit frequency over this spec

文件：260.209 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体