3-PHASE BRIDGE DRIVER

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are com

文件：436.16 Kbytes 页数：27 Pages

Infineon

英飞凌

3-PHASE BRIDGE DRIVER

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

文件：218.29 Kbytes 页数：12 Pages

IRF

Floating channel designed for bootstrap operation Fully operational to 600V or1200V Tolerant to negative transient voltage dV/dt immune

Description The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3-phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are

文件：433.98 Kbytes 页数：27 Pages

IRF

1200 V three-phase gate driver IC with over current protection, fault reporting, OPAMP, and shutdown

1200 V 三相驱动器 IC,具有典型的 0.25 A 拉电流和 0.5 A 灌电流，采用 28 引脚 SOICWB 封装，适用于 IGBT 和 MOSFET。也有 28 引脚 PDIP 和44 引脚 PLCC封装可选。 • 专为自举操作设计的浮动通道\n• 完全运行时的电压高达 +1200 V\n• 完全运行时的电压高达 +600 V (IR2135)的选项\n• 容许负瞬态电压高\n• 不受 dV/dt 影响\n• 栅极驱动电源范围：10 V/12 V 至 20 V DC，瞬态电压高达 25 V。\n• 全通道欠压锁定\n• 过流关断会关闭所有六个驱动器\n• 独立的 3 个半桥驱动器\n• 全通道匹配传播延迟\n• 2.5 V 逻辑兼容\n• 输出与输入不同相\n\n优势:;

Infineon

英飞凌

Package：28-SOIC（0.295"，7.50mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon

英飞凌

Package：28-SOIC（0.295"，7.50mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon

英飞凌

Package：28-SOIC（0.295"，7.50mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon

英飞凌