HALF-BRIDGE DRIVER

Description The IR2183(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS o

文件：386.11 Kbytes 页数：22 Pages

IRF

HALF-BRIDGE DRIVER

Description The IR2183(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS o

文件：386.11 Kbytes 页数：22 Pages

IRF

HALF-BRIDGE DRIVER

Description The IR2183(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge dized monolithic construction. The logic input is compatible with standard CMOS o

文件：386.11 Kbytes 页数：22 Pages

IRF

HALF-BRIDGE DRIVER

文件：288.16 Kbytes 页数：22 Pages

IRF

HALF-BRIDGE DRIVER

文件：361.81 Kbytes 页数：22 Pages

Infineon

英飞凌

HALF-BRIDGE DRIVER

文件：361.81 Kbytes 页数：22 Pages

Infineon

英飞凌

HALF-BRIDGE DRIVER

文件：288.16 Kbytes 页数：22 Pages

IRF

HALF-BRIDGE DRIVER

文件：361.81 Kbytes 页数：22 Pages

Infineon

英飞凌

HALF-BRIDGE DRIVER

文件：288.16 Kbytes 页数：22 Pages

IRF

600 V half-bridge gate driver IC with programmable deadtime

600 V Half Bridge Driver IC with typical 1.9 A source and 2.3 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP. • Floating channel designed for bootstrap operation\n• Fully operational to +600 V\n• Tolerant to negative transient voltage\n• dV/dt immune\n• Gate drive supply range from 10 to 20 V\n• Undervoltage lockout for both channels\n• 3.3 V and 5 V input logic compatible\n• Matched propagation delay for b;

Infineon

英飞凌