| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Automotive,Bidirectional,Low-andHigh-SideVoltageOutput,Current-SenseAmplifiers | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
Bidirectional,Low-andHigh-SideVoltageOutput,Current-SenseAmplifiers | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
INAx181Bidirectional,Low-andHigh-SideVoltageOutput,Current-SenseAmplifiers | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
Automotive,bidirectional,low-andhigh-sidevoltageoutput,current-senseamplifiers | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
INAx181Bidirectional,Low-andHigh-SideVoltageOutput,Current-SenseAmplifiers 1Features •Common-moderange(VCM):–0.2Vto+26V •Highbandwidth:350kHz(A1devices) •Offsetvoltage: –±150μV(maximum)atVCM=0V –±500μV(maximum)atVCM=12V •Outputslewrate:2V/μs •Bidirectionalcurrent-sensingcapability •Accuracy: –±1gainerror(maximum) – | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
INAx181-Q1Automotive,Bidirectional,Low-andHigh-SideVoltageOutput,Current-SenseAmplifiers 1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°C≤TA≤125°C –HBMESDclassificationlevel2 –CDMESDclassificationlevelC6 •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Common-moderange(VCM):– | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
Automotive,Bidirectional,Low-andHigh-SideVoltageOutput,Current-SenseAmplifiers | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
OUTLINECOUP | IPPInnovative Power Products, Inc. 创新电力创新电力产品股份有限公司 | IPP | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HIGHANDLOWSIDEDRIVER Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
产品属性
- 产品编号：
IR2181PBF
- 制造商：
Infineon Technologies
- 类别：
集成电路（IC） > 栅极驱动器
- 包装：
管件
- 驱动配置：
半桥
- 通道类型：
独立式
- 栅极类型：
IGBT，N 沟道 MOSFET
- 电压 - 供电：
10V ~ 20V
- 逻辑电压 - VIL，VIH：
0.8V，2.7V
- 电流 - 峰值输出（灌入，拉出）：
1.9A，2.3A
- 输入类型：
非反相
- 上升/下降时间（典型值）：
40ns，20ns
- 工作温度：
-40°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
8-DIP（0.300"，7.62mm）
- 供应商器件封装：
8-PDIP
- 描述：
IC GATE DRVR HALF-BRIDGE 8DIP
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
8-DIP(0.300,7.62mm) |
25294 |
英飞凌电源管理芯片-原装正品 |
询价 | ||
INFINEON |
23+ |
DIP8 |
28611 |
长期有货,进口原装,欢迎来电咨询。 |
询价 | ||
InternationalRectifier |
1818+ |
8-DIP |
11846 |
询价 | |||
ir |
2010+ |
21 |
进口原装刚到,可看货 |
询价 | |||
Infineon |
21+ |
PDIP-8 |
250 |
保证原装正品 深圳现货 |
询价 | ||
IR |
23+ |
DIP |
6633 |
原装优势公司现货! |
询价 | ||
IR |
21+ |
DIP |
7566 |
全新原装现货 |
询价 | ||
Infineon(英飞凌) |
23+ |
PDIP-8 |
3022 |
特价优势库存质量保证稳定供货 |
询价 | ||
Infineon(英飞凌) |
23+ |
PDIP-8 |
7178 |
百分百原装正品,可原型号开票 |
询价 | ||
IR |
23+ |
8-DIP |
8238 |
询价 |
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