Crystal Clock Oscillator Specification

文件：152.86 Kbytes 页数：2 Pages

IQD

Standard 1.6 x 1.2mm crystal oscillator in a ceramic package with a seam sealed metal lid, hermetically sealed

文件：157.14 Kbytes 页数：7 Pages

IQD

Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Current Sense • Fast Switching • Ease

文件：228.9 Kbytes 页数：8 Pages

IRF

HEXFET POWER MOSFET

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Current Sense • Fast Switching • Ease

文件：1.13633 Mbytes 页数：9 Pages

IRF

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.

文件：95.09 Kbytes 页数：9 Pages

PHI

PHI