Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

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Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤70mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.47 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：60R070F7；Package：PG-TO247-3；600V CoolMOS짧 CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

文件：1.39023 Mbytes 页数：14 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

文件：335.73 Kbytes 页数：2 Pages

ISC

无锡固电

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ C6 结合了英飞凌作为业内先进的超结MOSFET供应商的相关经验与其先进的创新技术C6 器件具备了快速开关超结 MOSFET 的所有优点，同时又不牺牲易用性。很低的开关和通态损耗使开关应用更高效，结构紧凑、重量更轻、温度更低。\n • 600V CoolMOS™ C6 可替代 600V CoolMOS™ C3\n• 650V CoolMOS™ C6 可替代 650V CoolMOS™ C3 • 易于控制开关行为\n• 由于非常低的品质因数（R DS(ON)*Q g）和E oss），因此损耗极低\n• 非常高的换流坚固性\n• 使用简便\n• 与 C3 相比，具有更高的轻载效率\n• 出色的可靠性和经过实践验证的 CoolMOS™ 质量以及高密度二极管耐用性\n• 与以前的 CoolMOS™ 几代产品相比，性价比更高\n• 更高效、更紧凑、重量更轻、温度更低\n\n\n优势:\n \n • 提升功率密度\n• 提升可靠性\n• 通用部件可在软、硬开关拓扑中使用\n• 提高轻载效率\n• 提高在硬开关应用中的效率\n• 改进了易用性\n• 减轻可能因为 PCB 布局和封装寄生效应而引;

Infineon

英飞凌

英飞凌对谐振高功率拓扑的回答

The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compare • Ultra-fast body diode\n• Best-in-class reverse recovery charge (Qrr)\n• Improved reverse diode dv/dt and dif/dt ruggedness\n• Lowest FOM RDS(on) x Qg and Eoss\n• Best-in-class RDS(on)/package combinations\n\n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topol;

Infineon

英飞凌

600 V CoolMOS ™ 8 功率晶体管

600 V CoolMOS™ 8 power transistor • Excellent commutation ruggedness\n• Integrated fast body diode\n• .XT interconnection\n• ESD protection\n\n优势:\n• Increased power density\n• Ease of use and fast design-in\n• Low ringing tendency\n• Simplified thermal management\n• Simplified portfolio;

Infineon

英飞凌