首页 >IPU06N03LB>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS30V RDSON(MAX.)6mΩ ID18A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS30V RDSON(MAX.)6mΩ ID75A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS30V RDSON(MAX.)6mΩ ID75A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS30V RDSON(MAX.)6mΩ ID26A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
N-ChannelMOSFET Applications: ●Adaptor ●Charger ●SMPS Features: ●RoHSCompliant ●LowONResistance ●LowGateCharge ●PeakCurrentvsPulseWidthCurve InductiveSwitchingCurves | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
OptiMOS2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •175°Coperatingtemperature •dv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS짰2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel-Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •175°Coperatingtemperature •dv/dtr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS짰2Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOSBuckconverterseries | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDECfortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS짰2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDECfortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS짰2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS짰2Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Idealforhigh-frequencydc/dcconverters | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Idealforhigh-frequencydc/dcconverters | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS짰2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDECfortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS2Power-Transistor Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDECfortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
IPU06N03LB
- 制造商：
INFINEON
- 制造商全称：
Infineon Technologies AG
- 功能描述：
OptiMOS㈢2 Power-Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
12+ |
TO-251 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
INFINEON |
23+ |
TO-251 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
INFINEON |
23+ |
TO-251 |
9960 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-251 |
30000 |
只做正品原装现货 |
询价 | ||
INFINEON/英飞凌 |
23+ |
IPAK |
10000 |
公司只做原装正品 |
询价 | ||
Infineon/英飞凌 |
22+ |
IPAK |
6000 |
十年配单,只做原装 |
询价 | ||
INFINEON/英飞凌 |
21+ROHS |
IPAK |
32365 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
Infineon/英飞凌 |
23+ |
IPAK |
6000 |
原装正品，支持实单 |
询价 | ||
isc |
2024 |
IPAK/TO-251 |
10000 |
国产品牌isc,可替代原装 |
询价 |
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