High efficiency, high-side switch with extended diagnostics and smart driving for capacitive loads

Features • 8 V to 60 V operating supply voltage range • Operating output current: 2.4 A (IPS1025H/HQ) or 5.6 A (IPS1025H-32/HQ-32) • Smart driving of capacitive load • Fast demagnetization of inductive loads • Under-voltage lock-out • VCC over-voltage protection • Output overload and over-t

文件：3.94315 Mbytes 页数：32 Pages

STMICROELECTRONICS

意法半导体

High efficiency, high-side switch with extended diagnostics and smart driving for capacitive loads

Features • 8 V to 60 V operating supply voltage range • Operating output current: 2.4 A (IPS1025H/HQ) or 5.6 A (IPS1025H-32/HQ-32) • Smart driving of capacitive load • Fast demagnetization of inductive loads • Under-voltage lock-out • VCC over-voltage protection • Output overload and over-t

文件：3.94315 Mbytes 页数：32 Pages

STMICROELECTRONICS

意法半导体

OptiMOS3 Power-Transistor

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文件：1.236 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：10N03LA；Package：TO-251-3-11；OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：403.13 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：10N03LA；Package：TO-251-3-11；OptiMOS2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：412.96 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：403.13 Kbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor

OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：417.34 Kbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

文件：403.6 Kbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS 2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

文件：413.95 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

文件：403.6 Kbytes 页数：12 Pages

Infineon

英飞凌