丝印：65A040F7；Package：PG-HDSOP-22；MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.52921 Mbytes 页数：14 Pages

Infineon

英飞凌

650 V CoolMOS ™ CFD7A N 通道汽车 SJ 功率 MOSFET，采用 HDSOP-22 底部冷却

采用 QDPAK 底部冷却 SMD 封装的 40mΩ IPQC65R040CFD7A 属于汽车级 650 V CoolMOS ™ SJ 功率 MOSFET CFD7A 产品系列的一部分。与上一代产品相比，CoolMOS ™ CFD7A 具有更高的可靠性和功率密度，同时提高了设计灵活性。底部冷却进一步支持增加功率密度，降低寄生源电感，并配备开尔文源引脚和3.2 毫米爬电距离。 • 符合 AEC-Q101 标准\n• 固有快速体二极管\n• 开尔文源极引脚\n• 高压爬电距离为 3.2 毫米;

Infineon

英飞凌

650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.43534 Mbytes 页数：14 Pages

Infineon

英飞凌

650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.25661 Mbytes 页数：14 Pages

Infineon

英飞凌

MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.41929 Mbytes 页数：14 Pages

Infineon

英飞凌