集成快速体二极管的 650 V CoolMOS ™ CFD7 超结 MOSFET 是谐振高功率拓扑的完美选择

\n优势:\n• Excellent hard-commutation ruggedness\n• Extra safety margin for designs with increased bus voltage\n• Enabling increased power density\n• Outstanding light-load efficiency in industrial SMPS applications\n• Improved full-load efficiency in industrial SMPS applications\n• Price competitiven;

Infineon

英飞凌

丝印：65R040F7；Package：PG-HSOF-8；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.43534 Mbytes 页数：14 Pages

Infineon

英飞凌

Package：8-PowerSFN；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 650V 8HSOF

Infineon

英飞凌

650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.25661 Mbytes 页数：14 Pages

Infineon

英飞凌

MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.41929 Mbytes 页数：14 Pages

Infineon

英飞凌

MOSFET 650V CoolMOSª CFD7A SJ Power Device

Features • Latest 650V automotive qualified technology with integrated fast body diode on the market featuring ultra low Qrr • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • 100% avalanche tested • Best-in-class RDS(on) in SMD and THD packages Benefits • Lower switching losses enabling high

文件：1.52921 Mbytes 页数：14 Pages

Infineon

英飞凌