isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：341.49 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS Power-Transistor

文件：125.42 Kbytes 页数：8 Pages

Infineon

英飞凌

20V-650V汽车级MOSFET

• N-Channel\n • Enhancement mode\n • Logic Level\n • 175°C operating temperature\n • Avalanche rated\n • dv/dt rated\n • Green Package (lead free)\n\n优势:\n• highest current capability 180A\n • low switching and conduction power losses for high thermal efficiency\n • robust packages with superior qua;

Infineon

英飞凌

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 20mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.07 Kbytes 页数：2 Pages

ISC

无锡固电

100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@20A

文件：297.1 Kbytes 页数：8 Pages

PANJIT

強茂