100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@20A

文件：297.1 Kbytes 页数：8 Pages

PANJIT

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中压MOSFET (60 - 200V , RDS(ON) < 1Ω)

Panjit

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丝印：D70N10；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@20A

文件：297.1 Kbytes 页数：8 Pages

PANJIT

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丝印：70N10SA；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：476.76 Kbytes 页数：6 Pages

PANJIT

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中压MOSFET(60 - 200V , Rds(on) < 1Ω)

PANJIT’s PJD70N10SA-AU 100V Medium-Voltage MOSFET masterfully combines SGT and N-channel technology within the slim TO-252AA package. This MOSFET stands out for its efficiency and compact size, making it perfectly suited for the demanding conditions of automotive applications. It's designed to suppo • Excellent FOM\n• AEC-Q101 Qualified\n• Green molding compound as per IEC 61249 standard;

Panjit

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