OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：424.44 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：075N15N；Package：PG-TO220-3；3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：744.54 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：424.44 Kbytes 页数：11 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

文件：338.32 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS 3 Power-Transistor

文件：744.53 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS 3 Power-Transistor

文件：744.53 Kbytes 页数：11 Pages

Infineon

英飞凌

N 沟道功率 MOSFET

与排名第二的竞争对手相比，150V OptiMOS ™的 R DS(on) 降低了 40%，品质因数 (FOM) 降低了 45%。这一重大改进开辟了新的可能性，例如从引线封装转向 SMD 封装或用一个 OptiMOS ™部件有效地替换两个旧部件。 • 卓越的开关性能\n• 低 Q g 和 Q gd\n• 符合 RoHS 标准 - 无卤素\n• MSL1 级;

Infineon

英飞凌

OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Infineon

英飞凌