首页 >IPP075N15N3-G>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
IPP075N15N3-G | OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
IPP075N15N3-G | OptiMOS 3 Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
N-Channel150-V(D-S)MOSFET KeyFeatures: •LowrDS(on)trenchtechnology •Lowthermalimpedance •Fastswitchingspeed | AnalogPower Analog Power | AnalogPower | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MaterialContentDataSheet | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
OptiMOS3Power-Transistor Features •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤7.5mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
OptiMOS??Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
3Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon |
21+ |
NA |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INFINEON |
23+ |
8000 |
专注配单,只做原装进口现货 |
询价 | |||
INFINEON |
23+ |
8000 |
只做原装现货 |
询价 | |||
INFINEON |
23+ |
7000 |
询价 | ||||
Infineon/英飞凌 |
24+ |
20000 |
全新、原装、现货 |
询价 | |||
INFINEON/英飞凌 |
23+ |
TO-220 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
询价 | ||
INFINEON/英飞凌 |
24+ |
NA/ |
3444 |
原装现货,当天可交货,原型号开票 |
询价 | ||
INFINEON |
24+ |
TO-220 |
6000 |
公司渠道现货 |
询价 | ||
INFINEON |
24+ |
TO-220 |
8500 |
原厂原包原装公司现货,假一赔十,低价出售 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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