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IPP075N15N3-G

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP075N15N3-G

OptiMOS 3 Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

AMIB075N15N3

N-Channel150-V(D-S)MOSFET

KeyFeatures: •LowrDS(on)trenchtechnology •Lowthermalimpedance •Fastswitchingspeed

AnalogPower

Analog Power

IIPP075N15N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA075N15N3

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA075N15N3G

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPA075N15N3G

OptiMOS3Power-Transistor

Features •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPI075N15N3

iscN-ChannelMOSFETTransistor

•DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤7.5mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPI075N15N3G

OptiMOS??Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPI075N15N3G

3Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

供应商型号品牌批号封装库存备注价格
Infineon
21+
NA
2500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
INFINEON
23+
8000
专注配单,只做原装进口现货
询价
INFINEON
23+
8000
只做原装现货
询价
INFINEON
23+
7000
询价
Infineon/英飞凌
24+
20000
全新、原装、现货
询价
INFINEON/英飞凌
23+
TO-220
11220
英飞凌优势原装IC,高效BOM配单。
询价
INFINEON/英飞凌
24+
NA/
3444
原装现货,当天可交货,原型号开票
询价
INFINEON
24+
TO-220
6000
公司渠道现货
询价
INFINEON
24+
TO-220
8500
原厂原包原装公司现货,假一赔十,低价出售
询价
INFINEON/英飞凌
23+
TO-220
50000
全新原装正品现货,支持订货
询价
更多IPP075N15N3-G供应商 更新时间2025-5-16 18:22:00