OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：424.44 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS 3 Power-Transistor

文件：744.53 Kbytes 页数：11 Pages

Infineon

英飞凌

N-Channel 150-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

文件：262.25 Kbytes 页数：5 Pages

AnalogPower

N-Channel MOSFET Transistor

文件：338.32 Kbytes 页数：2 Pages

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F package • Low input capacitance and gate charge • Low gate input resistance • Reduced switching and conduction losses • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching application

文件：261 Kbytes 页数：2 Pages

ISC

无锡固电