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AMIB075N15N3

N-Channel 150-V (D-S) MOSFET

KeyFeatures: •LowrDS(on)trenchtechnology •Lowthermalimpedance •Fastswitchingspeed

AnalogPower

Analog Power

IIPP075N15N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA075N15N3

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA075N15N3G

OptiMOS3Power-Transistor

Features •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPA075N15N3G

MaterialContentDataSheet

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPI075N15N3

iscN-ChannelMOSFETTransistor

•DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤7.5mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPI075N15N3G

3Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPI075N15N3G

OptiMOS??Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPI075N15N3-G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPI075N15N3-G

OptiMOS??Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

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更多AMIB075N15N3供应商 更新时间2025-7-18 14:01:00