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IPI60R299CP

CoolMOS Power Transistor

Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: Hard switching SMPS topologies

文件:317.27 Kbytes 页数:10 Pages

INFINEON

英飞凌

IPI60R299CP

isc N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.299Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件:331.2 Kbytes 页数:2 Pages

ISC

无锡固电

IPI60R299CP

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. ·Lowest figure of merit R on x Q g\n ·Ultra low gate charge\n ·Extreme dv/dt rate\n ·Ultra low R DS(on), ultra low gate charge, very fast switching\n ·V th 3 V, g fs very high, internal R g very low\n ·High current capability\n ·Significant reduction of conduction and switching losses\n ·High;

Infineon

英飞凌

IPL60R299CP

600V CoolMOS CP Power Transistor

Description The CoolMOS™ CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • Reduced boar

文件:1.5987 Mbytes 页数:13 Pages

INFINEON

英飞凌

IPL60R299CP

Metal Oxide Semiconductor Field Effect Transistor

文件:1.65794 Mbytes 页数:13 Pages

INFINEON

英飞凌

IPP60R299CP

CoolMOS Power Transistor

CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: Hard swi

文件:334.48 Kbytes 页数:10 Pages

INFINEON

英飞凌

技术参数

  • VDS max:

    600.0V

  • RDS (on) max:

    299.0mΩ

  • Polarity :

    N

  • ID  max:

    11.0A

  • Ptot max:

    96.0W

  • IDpuls max:

    34.0A

  • VGS(th) min max:

    2.5V 3.5V

  • QG :

    22.0nC 

  • Rth :

    1.3K/W 

  • RthJC max:

    1.3K/W

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
24+
TO-262
3580
原装现货/15年行业经验欢迎询价
询价
INFINEON
24+
PG-TO262
8866
询价
Infineon
24+
NA
3000
进口原装正品优势供应
询价
INFINEON
23+
TO-262
11846
一级代理商现货批发,原装正品,假一罚十
询价
inf进口原
25+23+
TO-262
24139
绝对原装正品全新进口深圳现货
询价
inf进口原
24+
TO-262
30980
原装现货/放心购买
询价
INFINEON
25+
TO-262
16000
现货
询价
INFINEON/英飞凌
23+
TO-262
50000
全新原装正品现货,支持订货
询价
inf进口原
25+
TO-262
10000
原装现货假一罚十
询价
INFINEON/英飞凌
2022+
TO-262
16000
原厂代理 终端免费提供样品
询价
更多IPI60R299CP供应商 更新时间2026-1-20 13:36:00