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IIPP60R280C6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IIPW60R280C6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPA60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPA60R280C6

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB60R280C6

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPB60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPB60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPI60R280C6

iscN-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6series combinestheexperienceoftheleadingSJMOSFETsupplierwith highclassinnovation.Theoffere

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP60R280C6

N-ChannelMOSFETTransistor

•DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.28Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IPP60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPP60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPW60R280C6

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPW60R280C6

N-ChannelMOSFETTransistor

•DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IPI60R280C6XK

  • 制造商:

    Infineon Technologies AG

  • 功能描述:

    Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-262

  • 功能描述:

    COOLM - Rail/Tube

  • 制造商:

    Infineon Technologies

  • 功能描述:

    Infineon Technologies IPI60R280C6XK MOSFETs

供应商型号品牌批号封装库存备注价格
Infineon
1931+
N/A
1867
加我qq或微信,了解更多详细信息,体验一站式购物
询价
INFINEON/英飞凌
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
INFINEON
1809+
TO262-3
1675
就找我吧!--邀您体验愉快问购元件!
询价
Infineon Technologies
21+
TO-220AB
21000
专业分立半导体,原装渠道正品现货
询价
Infineon
22+
NA
1867
加我QQ或微信咨询更多详细信息,
询价
Infineon Technologies
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
询价
Infineon Technologies
21+
TO2623 Long Leads I2Pak TO262A
13880
公司只售原装,支持实单
询价
INFINEON/英飞凌
2021+
45000
十年专营原装现货,假一赔十
询价
Infineon Technologies
23+
TO2623 Long Leads I2Pak TO262A
9000
原装正品,支持实单
询价
Infineon Technologies
23+
原装
5000
原装正品,提供BOM配单服务
询价
更多IPI60R280C6XK供应商 更新时间2024-5-30 10:18:00