丝印：5R199P；Package：PG-TO262；CoolMOS Power Transistor

Features • Lowest figure-of -merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for: • Hard & soft switching SMPS topologies

文件：280.67 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

• FEATURES • With To-262(I2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：297.01 Kbytes 页数：3 Pages

ISC

无锡固电

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ CP 是英飞凌第五个 CoolMOS™ 系列产品，专门设计用于 ATX、笔记本适配器 PDP 和 LCD 电视的软硬开关拓扑、CCM PFC 以及 PWM。\n   • 极低的 R on x Q g 品质因数\n• 极端 dv/dt 额定值\n• V th 为 3 V，g fs 极高，内部 R g 非常低\n• 显著减少传导和开关损耗\n• 出色性价/性能比\n\n优势:;

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.199Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.74 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOSTM Power Transistor

Features • Lowest figure-of -merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for: • Hard & soft switching SMPS topologies

文件：283.25 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High Peak Current Capability • FEATURES • Static drain-source on-resistance: RDS(on)≤199mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.95 Kbytes 页数：2 Pages

ISC

无锡固电