650V CoolMOS C6 CFD Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

文件：7.64783 Mbytes 页数：21 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdso

文件：4.60565 Mbytes 页数：21 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.31097 Mbytes 页数：14 Pages

Infineon

英飞凌

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

650V CoolMOS ™ CFD2 的替代品是 600V CoolMOS ™ CFD7 650V CoolMOS ™ CFD2 是英飞凌第二代市场领先的高压 CoolMOS ™ MOSFET，带有集成快速体二极管。CFD2 器件是 600 V CFD 的后继产品，能效更高。与竞争对手的器件相比，更柔和的换向特性以及更好的 EMI 特性使该产品具有明显的优势。 • 集成快速体二极管，650 V\n• 硬开关中的低电压过冲\n• 显著降低 Q G\n• 更紧密的 R DS(on)max 至 R DS(on)typ 窗口\n• 易于设计\n•;

Infineon

英飞凌

20V-650V汽车级MOSFET

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ;

Infineon

英飞凌