IPD60R360CFD7

丝印：60R360F7；Package：PG-TO252-3；600V CoolMOS짧 CFD7 Power Device

IPD60R360CFD7

600V CoolMOS™ CFD7 Superjunction MOSFET with integrated fast body diode in DPAK package is the perfect choice for resonant high power topologies; • Ultra-fast body diode\n• Best-in-class reverse recovery charge (Qrr)\n• Improved reverse diode dv/dt and dif/dt ruggedness\n• Lowest FOM RDS(on)x Qgand Eoss\n• Best-in-class RDS(on)/package combinations\n\n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topologies\n• Highest efficiency with outstanding ease-of-use/performance trade-off\n• Enabling increased power density solutions\n;

IPA60R360CFD7

600VCoolMOS짧CFD7PowerDevice

IPB60R360CFD7

MOSFET600VCoolMOSªCFD7PowerTransistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

IPP60R360CFD7

600VCoolMOS짧CFD7PowerTransistor