IPD30N10S3L-34

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=31mΩ(Max)@VGS=10V APPLICATIONS ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

IPD30N10S3L-34

OptiMOS-T Power-Transistor

IPD30N10S3L-34

OptiMOS짰-T Power-Transistor

IPD30N10S3L-34

isc N-Channel MOSFET Transistor

IPD30N10S3L-34

20V-650V汽车级MOSFET; • N-channel - Enhancement mode\n • Automotive AEC Q101 qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green product (RoHS compliant)\n • 100% Avalanche tested\n\n优势:\n• highest current capability 180A\n • low switching and conduction power losses for high thermal efficiency\n • robust packages with superior quality and reliability\n • optimized total gate charge enables smaller driver output stages\n;

IPD30N10S3L-34_11

OptiMOS짰-T Power-Transistor