IPB65R660CFDA说明书PDF资料贸易商英飞凌-114ic电子网

首页 >IPB65R660CFDA>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业
IPB65R660CFDA	文件：2.34202 Mbytes Page：15 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
HCD65R660S	文件：285.62 Kbytes Page：8 Pages	SuperiorAvalancheRuggedTechnology	SEMIHOW SemiHow Co.,Ltd.
HCD65R660S	文件：285.62 Kbytes Page：8 Pages	650VN-ChannelSuperJunctionMOSFET	SEMIHOW SemiHow Co.,Ltd.
HCS65R660S	文件：188.97 Kbytes Page：7 Pages	SuperiorAvalancheRuggedTechnology	SEMIHOW SemiHow Co.,Ltd.
HCU65R660S	文件：285.62 Kbytes Page：8 Pages	650VN-ChannelSuperJunctionMOSFET	SEMIHOW SemiHow Co.,Ltd.
IIPD65R660CFD	文件：335.3 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IIPP65R660CFD	文件：338.51 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsf	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IIPW65R660CFD	文件：334.83 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤660mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPA65R660CFD	文件：269.89 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.66Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPA65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPA65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPB65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPB65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPB65R660CFD	文件：189.21 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPD65R660CFD	文件：335.3 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Highcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.66Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPD65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPD65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPD65R660CFDA	文件：1.42987 Mbytes Page：14 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPI65R660CFD	文件：4.46997 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPI65R660CFD	文件：3.9515 Mbytes Page：20 Pages	650VCoolMOSCFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresu	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司

12 >>>

详细参数

型号：
IPB65R660CFDA
功能描述：
MOSFET COOL MOS
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	IPB65R660CFDA	Infineon	23+	D2PAK(TO-263)	12300	全新原装真实库存含13点增值税票!	询价
深圳市奥皇科技有限公司	IPB65R660CFDA	Infineon/英飞凌	22+	PG-TO263-3	16609	只做原装现货工厂免费出样欢迎咨询订单	询价
深圳市光格集成电路有限公司	IPB65R660CFDA	INFINEON	21+	TO263	1000	15年光格只做原装正品	询价
深圳市高捷芯城科技有限公司	IPB65R660CFDA	Infineon(英飞凌)	23+	TO-263	8498	支持大陆交货,美金交易。原装现货库存。	询价
深圳市百视威讯电子科技有限公司	IPB65R660CFDA		23+	N/A	85700	正品授权货源可靠	询价
深圳市富安睿科技有限公司	IPB65R660CFDA	英飞凌	21+	PG-TO263-3	6000	绝对原裝现货	询价
深圳市斌腾达科技有限公司	IPB65R660CFDA	INFINE0N	21+	D2PAK (TO-263)	32568	100%进口原装!长期供应!绝对优势价格(诚信经营	询价
艾睿国际（香港）有限公司	IPB65R660CFDA	Infineon(英飞凌)	2112+	PG-TO263-3	115000	1000个/圆盘一级代理专营品牌!原装正品,优势现货,	询价
深圳市晴轩时代电子有限公司	IPB65R660CFDA	Infineon/英飞凌	21+	PG-TO263-3	8800	公司只作原装正品	询价
深圳市杰顺创科技有限公司	IPB65R660CFDA	Infineon/英飞凌	21+	PG-TO263-3	6000	原装现货正品	询价

更多IPB65R660CFDA供应商更新时间2024-4-26 15:30:00

详细参数

相关规格书

相关库存