CoolMOSTM Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies

文件：352.6 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.81 Kbytes 页数：2 Pages

ISC

无锡固电

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. ·Lowest figure of merit R on x Q g\n ·Ultra low gate charge\n ·Extreme dv/dt rate\n ·Ultra low R DS(on), ultra low gate charge, very fast switching\n ·V th 3 V, g fs very high, internal R g very low\n ·High current capability\n ·Significant reduction of conduction and switching losses\n ·High;

Infineon

英飞凌

CoolMOS Power Transistor

文件：308.12 Kbytes 页数：10 Pages

INFINEON

英飞凌

CoolMOS Power Transistor

CoolMOS® Power Transistor Features • Worldwide best Rds,on in TO252 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified for industrial grade applications according to JEDEC1) • Pb-free lead plating; RoHS compliant; available in Halogen free mold co

文件：350.87 Kbytes 页数：10 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.385Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.74 Kbytes 页数：2 Pages

ISC

无锡固电