20V-650V汽车级MOSFET

·N-channel - Enhancement mode\n ·AEC qualified\n ·MSL1 up to 260°C peak reflow\n ·175°C operating temperature\n ·Green Product (ELV compliant 100% lead free)\n ·100% Avalanche tested;

Infineon

英飞凌

N-channel - Enhancement mode

文件：242.2 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS-T2 Power-Transistor

文件：160.1 Kbytes 页数：9 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) : 4mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·Fa

文件：334.95 Kbytes 页数：2 Pages

ISC

无锡固电