丝印：083N15LF；Package：PG-TO263-3；OptiMOSTM 5 Linear FET, 150 V

文件：914.3 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

文件：244.78 Kbytes 页数：2 Pages

ISC

无锡固电

结合低 RDS(on) 与宽安全工作区 (SOA)

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating a • Combination of low R DS(on) and wide safe operating area (SOA)\n• High max. pulse current\n• High continuous pulse current\n\n优势:\n• Rugged linear mode operation\n• Low conduction losses\n• Higher in-rush current enabled for faster start-up and shorter down time;

Infineon

英飞凌

INFINEON
原厂封装

Infineon

英飞凌

上传：深圳市朱博士电子科技有限公司

INFINEON
TO263-3

Infineon

英飞凌

上传：深圳市勤思达科技有限公司