优化的超结 MOSFET，兼具高能效和易用性

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platfor Efficiency \n • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G\n Ease-of-use \n • Integrated ESD diode from 180mN and above R DS(on)s\n• Integrated gate resistor R G\n• Rugged body diode\n• Wide portfolio in through hole and surface mount packages\n• Both standard grade and industrial ;

Infineon

英飞凌

丝印：60S600P7；Package：PG-TO220FullPAK；600V CoolMOS짧 P7 Power Transistor

文件：955.8 Kbytes 页数：14 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

文件：335.63 Kbytes 页数：2 Pages

ISC

无锡固电

600V CoolMOS짧 P7 Power Transistor

文件：903.22 Kbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOS짧 P7 Power Transistor

文件：922.94 Kbytes 页数：14 Pages

INFINEON

英飞凌