丝印：60R600P7；Package：PG-TO252-3；600V CoolMOS짧 P7 Power Transistor

文件：903.22 Kbytes 页数：14 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

文件：335.63 Kbytes 页数：2 Pages

ISC

无锡固电

优化的超结 MOSFET，兼具高能效和易用性

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platfor Efficiency \n • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G\n Ease-of-use \n • Integrated ESD diode from 180mN and above R DS(on)s\n• Integrated gate resistor R G\n• Rugged body diode\n• Wide portfolio in through hole and surface mount packages\n• Both standard grade and industrial ;

Infineon

英飞凌

N-Channel MOSFET Transistor

文件：335.65 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：60S600P7；Package：PG-TO252-3；600V CoolMOS짧 P7 Power Transistor

文件：922.94 Kbytes 页数：14 Pages

Infineon

英飞凌

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platfor Efficiency \n • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G\n Ease-of-use \n • Integrated ESD diode from 180mN and above R DS(on)s\n• Integrated gate resistor R G\n• Rugged body diode\n• Wide portfolio in through hole and surface mount packages\n• Both standard grade and industrial ;

Infineon

英飞凌