超高精度内置 MOSFET 单节锂电池保护 IC

Injoinic

英集芯科技

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors . . . designed primarily for large–signal output and driver amplifier stages in the 1.5 to 3.0 GHz frequency range. • Designed for Class B or C, Common Base Linear Power Amplifiers • Specified 28 Volt, 3.0 GHz Characteristics: Output Power — 1.0 to 5

文件：153.07 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

30A SUPER-FAST GLASS PASSIVATED RECTIFIER

Features ● Glass Passivated Die Construction ● Super-Fast Switching for High Efficiency ● High Current Capability ● Low Reverse Leakage Current ● High Surge Current Capability ● Plastic Material has UL Flammability Classification 94V-O

文件：45.84 Kbytes 页数：3 Pages

WTE

Won-Top Electronics

HIGH FREQUENCY SECONDARY RECTIFIER

DESCRIPTION Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247 this device is intended for secondary rectification. FEATURES AND BENEFITS ■ COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ■ UL

文件：55.32 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体