RU30J30M,全新正品当天发货.
场效应管(MOSFET)
2个N沟道(半桥)
漏源电压(Vdss) 30V
连续漏极电流(Id) 30A
功率(Pd) 29W
导通电阻(RDS(on)@Vgs,Id) 7mΩ@10V,20A
阈值电压(Vgs(th)@Id) 2.5V@250uA
栅极电荷(Qg@Vgs) 12nC@10V
输入电容(Ciss@Vds) 670pF@15V
反向传输电容(Crss@Vds) 75pF@15V
工作温度 +150℃@(Tj)
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