STP110N8F6,MOSFET N-channel 80 V, 0.0056 Ohm typ 110 A, STripFET F6 Power MOSFET.
技术: Si
安装风格: Through Hole
封装 / 箱体: TO-220-3
晶体管极性: N-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 80 V
Id-连续漏极电流: 110 A
Rds On-漏源导通电阻: 6.5 mOhms
Vgs - 栅极-源极电压: - 20 V, + 20 V
Vgs th-栅源极阈值电压: 2.5 V
Qg-栅极电荷: 150 nC
最小工作温度: - 55 C
最大工作温度: + 175 C
Pd-功率耗散: 200 W
通道模式: Enhancement
商标名: STripFET
商标: STMicroelectronics
配置: Single
下降时间: 48 ns
高度: 15.75 mm
长度: 10.4 mm
产品类型: MOSFET
上升时间: 61 ns
系列: STP110N8F6
1000个一盒
MOSFETs
晶体管类型: 1 N-Channel Power MOSFET
典型关闭延迟时间: 162 ns
典型接通延迟时间: 24 ns
宽度: 4.6 mm
单位重量: 2 g,全新原装当天发货或门市自取，量大价优，电子元器件一站式配单配套,稳定供应，照片是我们的产品实拍，因产品过多原因我们未对一.一产品进行参数描述，如需了解更多产品信息和价格欢迎咨询和购买请联系我们的工作人员
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